Multi-layer magnetic switching element comprising a magnetic...

Details Multi-layer magnetic switching element comprising a magnetic... Multi-layer magnetic switching element comprising a magnetic...

2004-08-16

2008-03-25

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C257S425000

Reexamination Certificate

active

07349247

ABSTRACT:
A magnetic switching element includes: a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a magnetic field from the ferromagnetic layer reaches, where the magnetic semiconductor layer changes its state from a paramagnetic state to a ferromagnetic state by applying a voltage thereto, and a magnetization corresponding to the magnetization of the ferromagnetic layer is induced in the magnetic semiconductor layer by applying a voltage to the magnetic semiconductor layer.

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H. Ohno, et al., Letters to Nature, vol. 408, pp. 944-946, “Electric-Field Control of Ferromagnetism”., Dec. 21-28, 2000.
Patent Abstracts of Japan (11-330387, 11-330585, and 2000-082283) corresponds to CN1236995A.
Patent Abstracts of Japan (09-147326) corresponds to CN1148710A.
Patent Abstracts of Japan (2001-156357 and 2001-156358) corresponds to CN1308317A.
Patent Abstracts of Japan (2000-082791) corresponds to CN1244017A.

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