Multi-layer magnetic random access memory and method for fabrica

Details Multi-layer magnetic random access memory and method for fabrica Multi-layer magnetic random access memory and method for fabrica

1997-06-16

1998-11-17

Nguyen, Tan T.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1115

Patent

active

058386084

ABSTRACT:
A new magnetic random access memory (MRAM) unit (30) is provided suitable for fabricating a MRAM device (20). The MRAM cell includes a magnetic storage element (32) and a current control element (33), for example, a diode, connected to the magnetic storage element in series to control a current in the magnetic storage element. The magnetic storage element has two magnetoresistive layers (36,38) separated by a non-magnetic layer (37), for example, aluminum oxide (Al.sub.2 O.sub.3). The diode allows a current to flow in only an MRAM cell activated by a column line and a row line.

REFERENCES:
patent: 5173873 (1992-12-01), Wu et al.
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5768181 (1998-06-01), Zhu et al.
patent: 5768183 (1998-06-01), Zhu et al.

Affiliated with

Also associated with

Rating

Multi-layer magnetic random access memory and method for fabrica does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-layer magnetic random access memory and method for fabrica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-layer magnetic random access memory and method for fabrica will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-891448