Multi-layer magnetic memory cell with low switching current

Details Multi-layer magnetic memory cell with low switching current Multi-layer magnetic memory cell with low switching current

1996-09-09

1998-04-28

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365171, 365158, G11C 1115

Patent

active

057454086

ABSTRACT:
A multi-layer magnetic memory cell including two similar layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material. Each of the two similar layers have a width that is less than a width of magnetic domain walls within the layer of magnetic material so that magnetic vectors in the two similar layers point along the length thereof. The two similar layers define a central plane parallel with the two similar layers symmetrically formed and positioned thereabout. Magnetic vectors in the two similar layers are switched simultaneously and the two similar layers are positioned close enough together to allow mutual cancellation of pole effects during simultaneous switching of the magnetic vectors.

REFERENCES:
patent: 4547866 (1985-10-01), Lutes et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 5343422 (1994-08-01), Kung et al.

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