Multi-layer magnet tunneling junction memory cells

Details Multi-layer magnet tunneling junction memory cells Multi-layer magnet tunneling junction memory cells

1998-02-24

1999-11-02

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365158, G11C 1115

Patent

active

059782579

ABSTRACT:
A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.

REFERENCES:
patent: 3480929 (1969-11-01), Bergman
patent: 4887236 (1989-12-01), Schloemann
patent: 5343422 (1994-08-01), Kung et al.
patent: 5734605 (1998-03-01), Zhu et al.

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