Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2007-07-17
2007-07-17
Lee, Calvin (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C438S112000
Reexamination Certificate
active
10915803
ABSTRACT:
Adhesive material is applied to a surface of a metallic core layer. The adhesive material is removed from a conductive region of the metallic core layer. A metallic contact is provided over the conductive region of the metallic core layer. The metallic core layer is laminated to an imprinted buildup layer, the buildup layer having a dielectric region and a conductive region, wherein a nonconductive region of the metallic core layer is bonded to the dielectric region of the buildup layer and the conductive region of the metallic core layer is bonded to the conductive region of the imprinted-buildup layer.
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Coomer Boyd L.
Walk Michael
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