Multi-layer hard mask structure for etching deep trench in...

Details Multi-layer hard mask structure for etching deep trench in... Multi-layer hard mask structure for etching deep trench in...

2006-02-07

2008-03-11

Tran, Binh X. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S718000, C438S719000, C438S723000, C438S736000, C438S743000, C216S079000, C216S080000

Reexamination Certificate

active

07341952

ABSTRACT:
A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first boro-silicate glass (BSG) layer and an overlying first undoped silicon glass (USG) layer and the second is composed of a second BSG layer and an overlying second USG layer. A polysilicon layer is formed overlying the multi-layer hard mask structure and then etched to form an opening therein. The multi-layer hard mask structure and the underlying substrate under the opening are successively etched to simultaneously form the deep trench in the substrate and remove the polysilicon layer. The multi-layer hard mask structure is removed.

REFERENCES:
patent: 6124206 (2000-09-01), Flietner et al.
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patent: 6969686 (2005-11-01), Hsieh et al.
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