Multi-layer hard mask structure for etching deep trench in...

Details Multi-layer hard mask structure for etching deep trench in... Multi-layer hard mask structure for etching deep trench in...

2006-04-18

2006-04-18

Jones, Deborah (Department: 1775)

Stock material or miscellaneous articles

Composite

Of quartz or glass

C428S427000

Reexamination Certificate

active

07029753

ABSTRACT:
A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask layer disposed thereon. The first hard mask layer is composed of a first boro-silicate glass (BSG) layer and an overlying first undoped silicon glass (USG) layer and the second is composed of a second BSG layer and an overlying second USG layer. A polysilicon layer is formed overlying the multi-layer hard mask structure and then etched to form an opening therein. The multi-layer hard mask structure and the underlying substrate under the opening are successively etched to simultaneously form the deep trench in the substrate and remove the polysilicon layer. The multi-layer hard mask structure is removed.

REFERENCES:
patent: 4666557 (1987-05-01), Collins et al.
patent: 2002/0173163 (2002-11-01), Gutsche

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