Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-05-30
2006-05-30
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S763000
Reexamination Certificate
active
07052918
ABSTRACT:
A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.
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Kim Yeong-kwan
Lee Sang-in
Lim Jae-soon
Park Heung-soo
Kennedy Jennifer
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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