Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-15
2005-11-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257SE27006
Reexamination Certificate
active
06965137
ABSTRACT:
A multilayered conductive memory device capable of storing information individually or as part of an array of memory devices is provided. Boundary control issues at the interface between layers of the device due to the use of incompatible materials can be avoided by intentionally doping the conductive metal oxide layers that are comprised of substantially similar materials. Methods of manufacture are also provided herein.
REFERENCES:
patent: 5666217 (1997-09-01), Kaneko et al.
patent: 6074990 (2000-06-01), Pique et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6323525 (2001-11-01), Noguchi et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6774054 (2004-08-01), Zhang et al.
patent: 2004/0109351 (2004-06-01), Morimoto et al.
patent: 2004/0235247 (2004-11-01), Hsu et al.
Beck et al., “Reproducible switching effect in thin oxide films for memory applications”, 2000, Applied Physics Letters, vol. 77, No. 1, pp. 139-141.
Betsuyaku et al., “Material Design for the Fabrication of p-type SrTiO3”, 2001, Jpn. J. Appl. Phys., vol. 40, pp. 6911-6912.
Gerstner et al., “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films”, 1998, Journal of Applied Physics, vol. 84, No. 10, pp. 5647-5651.
Kim et al., “Leakage Current Properties of (Ba, Sr)TiO3Films on Doped (Ba, Sr)RuO3Electrodes”, 2002, Journal of the Korean Physical Society, vol. 41, No. 2, pp. 227-231.
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, 2000, Applied Physics Letters, vol. 76, No. 19, pp. 2749-2571.
Simmons et al., “New conduction and reversible memory phenomena in thin insulating films”, 1967, Proc. Roy. Soc. A., vol. 301, pp. 77-102.
Waser, “Bulk Conductivity and Defect Chemistry of Acceptor-Doped Strontium Titanate in the Quenched State”, 1991, J. Am. Ceram. Soc., vol. 74, No. 8, pp. 1934-1940.
Waser, “dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics”, 1990, J. Am. Ceram. Soc., vol. 73, No. 6, pp. 1645-1653.
Watanabe et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystals”, 2001, Applied Physics Letters, vol. 78, No. 23, pp. 3738-3740.
Watanabe, “Electrical transport through Pb(Zr, Ti)O3p-nandp-pheterostructures modulated by bound charges at a ferroelectric surface: Ferroelectricp-ndiode”.
Watanabe et al., “Highly Resolved Conduction Properties of Ferroelectric/Semiconductor Diodes Exhibiting Memory Effect”, 1998, Journal of the Korean Physical Society, vol. 32, pp. S1361-S1364.
Zhuang et al., “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RAM)”, © 2002 IEEE, 0-7803-7463-X/02.
Hsia Steve Kuo-Ren
Kinney Wayne
Longcor Steven W.
Rinerson Darrell
Ho Tu-Tu
Malino Morgan
Nelms David
Unity Semiconductor Corporation
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