Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2007-07-17
2007-07-17
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S157000, C257S074000
Reexamination Certificate
active
11046956
ABSTRACT:
For fabricating a multi-gate transistor, at least one active pattern having uniform critical dimension is formed. Epitaxy structures are grown from exposed portions of the active pattern. A channel region of the transistor is formed from at least two surfaces of the active pattern. Source and drain are formed using the epitaxy structures.
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Choi Monica H.
Jackson Jerome
Karimy Mohammad Timor
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