Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2006-08-29
2006-08-29
Deb, Anjan (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S765010, C257S486000, C257S635000
Reexamination Certificate
active
07098676
ABSTRACT:
An on-chip redundant crack termination barrier structure, or crackstop, provides a barrier for preventing defects, cracks, delaminations, and moisture/oxidation contaminants from reaching active circuit regions. Conductive materials in the barrier structure design permits wiring the barriers out to contact pads and device pins for coupling a monitor device to the chip for monitoring barrier integrity.
REFERENCES:
patent: 5530280 (1996-06-01), White
patent: 5786705 (1998-07-01), Bui et al.
patent: 6091131 (2000-07-01), Cook et al.
patent: 6261945 (2001-07-01), Nye et al.
patent: 6326297 (2001-12-01), Vijayendran
patent: 6403389 (2002-06-01), Chang et al.
patent: 6621290 (2003-09-01), Marathe et al.
patent: 6633083 (2003-10-01), Woo et al.
Toa et al., “Electromigration Characteristics of TiN Barrier Layer Material”, Jun. 1995 IEEE Electron Device Letters, vol. 16, No. 6. p. 230-232.
Crowder Scott W.
Davis Charles R.
Engel Brett H.
Goldblatt Ronald D.
Landers William F.
Deb Anjan
International Business Machines - Corporation
Natalini Jeff
Ulrich Lisa J.
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