Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-02
1996-09-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257348, 257378, 257557, 257577, H01L 2701
Patent
active
055526241
ABSTRACT:
The electronic component comprises, topologically integrated within the same semiconductor structure (1), a first semiconductor area (12, 13, 3, 4, 20) capable of forming an insulated-gate field-effect transistor, and a second semiconductor area (12, 20, 18, 19, 11) capable of forming a lateral bipolar transistor, the two areas having a common semiconductor layer (20) in which the channel of the field-effect transistor is capable of being formed and/or the base current of the bipolar transistor is capable of flowing, the two areas being capable together of forming a structure capable of negative dynamic resistance.
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Merckel Gerard
Skotnicki Tomasz
Bowers Courtney A.
France Telecom
Jackson Jerome
LandOfFree
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