Multi-finger transistor

Details Multi-finger transistor Multi-finger transistor

2005-12-06

2005-12-06

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257S341000, C257S344000, C257S355000, C257S408000

Reexamination Certificate

active

06972463

ABSTRACT:
A multi-finger transistor is described, including multiple parallel transistors. Each transistor includes a gate dielectric layer, a gate, a source/drain region, and a drift region in the peripheral substrate of the source/drain region separating the source/drain region and the channel region under the gate. The width of the drift region extending from the side boundary of the source/drain region increases stepwise from the edge sections of the multi-finger transistor toward the central section of the same.

REFERENCES:
patent: 6576965 (2003-06-01), Eikyu et al.
patent: 2003/0155600 (2003-08-01), Shiau et al.

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