Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-15
1998-08-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257204, 257205, 257211, 257266, 257270, 257287, 257365, 257381, 257386, 257401, 257748, 257758, 257773, 257774, 257905, 257909, 257920, H01L 2710, H01L 2980, H01L 2976, H01L 2348
Patent
active
057897913
ABSTRACT:
The gate resistance of a high-frequency multi-finger MOS transistor is reduced by shorting together the ends of each of the gates by utilizing gate contacts, metal regions, vias, and a metal layer. Alternately, the gate resistance is reduced by utilizing a metal line that shorts all of the gate contacts together, and overlies each of the gates. By reducing the gate resistance, the maximum frequency f.sub.MAX of the multi-finger transistor can be increased.
REFERENCES:
patent: 5581097 (1996-12-01), Nariishi
patent: 5598009 (1997-01-01), Bui
patent: 5598029 (1997-01-01), Suzuki
Saito, M. et al., "Advantage of Small Geometry Silicon MOSFETs for High-Frequency Analog Applications under Low Power Supply Voltage of 0.5v," 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 71-72.
Voinigescu, S.P., et al. "An Assessment of the State-of-the-Art 0.5 .mu.m Bulk CMOS Technology for RF Applications," IEDM (1995) pp. 721-724.
National Semiconductor Corporation
Saadat Mahshid D.
Soward Ida Marie
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