Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-10-04
2009-10-20
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S394000, C430S022000
Reexamination Certificate
active
07604907
ABSTRACT:
Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.
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Literal Translation of the relevant parts of the Office Action for German Patent Application No. 10-2005-047 475.6-51; Date of mailing Jan. 31, 2007.
Notice to Submit a Response for Korean Patent Application No. 10-2004-79042 mailed on Feb. 22, 2006.
English Translation of Taiwanese Office Action (7 pages) corresponding to ROC (Taiwan) Patent Application No. 094134812; Issue Date: Feb. 9, 2009.
Jung Sung-Gon
Lee Doo-Youl
Lee Sook
Oh Seok-Hwan
Park Joo-On
Fraser Stewart A
Huff Mark F
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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