Multi-exposure lithography system providing increased...

Details Multi-exposure lithography system providing increased... Multi-exposure lithography system providing increased...

2005-08-19

2008-12-09

Kim, Peter B (Department: 2851)

Photocopying

Projection printing and copying cameras

Distortion introducing or rectifying

C430S022000

Reexamination Certificate

active

07463333

ABSTRACT:
Multi-exposure lithography systems are provided for improved overlay accuracy. In one aspect, a method for multi-exposure lithography operates by determining overlay parameters corresponding to each of a plurality of sub-layouts, inputting the overlay parameters into an exposure system, exposing each sub-layout to photoresist on a wafer by using the exposure system, wherein prior to the exposure process for a given sub-layout, a correction process is performed for the sub-layout using a corresponding overlay parameter to correct an overlay of the sub-layout, and developing the exposed photoresist after exposing all of the sub-layouts.

REFERENCES:
patent: 5989761 (1999-11-01), Kawakubo et al.

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