Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2008-01-22
2008-01-22
Lee, Calvin (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C257S113000
Reexamination Certificate
active
10828110
ABSTRACT:
Wafer scale and substrate processing device singulation methods, and devices made by the methods, for singulation of discrete devices from a processed wafer or laminated structures, involves formation of separation scribes or saw cuts at multiple elevations in intersecting scribe streets or lines so that a separation cut in one direction is at a different depth than a separation cut in a different and intersecting direction. Separation or fracture of the wafer or laminated structure along one of the separation cuts does not transfer to the separation line of the intersecting separation cut due to the difference in depth of the intersecting cuts or scribes, and due to the difference in elevation of the bottom surfaces of the cuts or scribes within the scribe streets, resulting in cleaner edges on the separated devices.
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HANA Microdisplay Technologies, Inc.
Lee Calvin
Roetzel & Andress
LandOfFree
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