Multi-element resistive memory

Details Multi-element resistive memory Multi-element resistive memory

2007-10-03

2009-11-24

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S171000, C365S173000, C365S097000, C365S100000, C257S295000, C338S03200R

Reissue Patent

active

RE040995

ABSTRACT:
A memory deviceinsert-start id="INS-S-00001" date="20091124" ?, and methods relating thereto,insert-end id="INS-S-00001" ?having memory cells in whichdelete-start id="DEL-S-00001" date="20091124" ?a singledelete-end id="DEL-S-00001" ?insert-start id="INS-S-00002" date="20091124" ?aninsert-end id="INS-S-00002" ?access transistor controls the grounding of at least twodelete-start id="DEL-S-00002" date="20091124" ?storagedelete-end id="DEL-S-00002" ?insert-start id="INS-S-00003" date="20091124" ?resistive memoryinsert-end id="INS-S-00003" ?elementsdelete-start id="DEL-S-00003" date="20091124" ?, such as resistive storage elements,delete-end id="DEL-S-00003" ?for purposes of reading the respective logical states of the storage elements. The logical states of the storage elements are decoupled from one another and are read independently. The storage elements are disposed in respective layers. Each storage element is coupled to first and second conductorsdelete-start id="DEL-S-00004" date="20091124" ?havingdelete-end id="DEL-S-00004" ?insert-start id="INS-S-00004" date="20091124" ?for reading the memory that haveinsert-end id="INS-S-00004" ?respectiveinsert-start id="INS-S-00005" date="20091124" ?, parallel,insert-end id="INS-S-00005" ?longitudinal axes.delete-start id="DEL-S-00005" date="20091124" ?The longitudinal axes are oriented substantially parallel to one another, at least in proximity to a particular storage element.delete-end id="DEL-S-00005" ?

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