Multi-dimensional memory cell using resonant tunneling diodes

Details Multi-dimensional memory cell using resonant tunneling diodes Multi-dimensional memory cell using resonant tunneling diodes

1992-09-03

1994-01-18

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Semiconductive

365 71, 365 72, 365168, G11C 506, G11C 1156

Patent

active

052804453

ABSTRACT:
A number of resonant tunneling diodes are connected in series with a resistor, a current source or a load device. A bit line is connected to every joint between any two devices through a switch. When properly biased, there can be (N+1).sup.m number of stable quantized operating points which are represented by a combination of m variables (of either voltage or current, where N is the number of peaks of the folding I-V characteristic and m is the number of bit lines. The m bit lines can write in (N+1).sup.m different combinations of inputs. During reading, the quantized voltage (or current) at each bit line is sensed. The number of stable states can be doubled by changing the polarity of the power supply.

REFERENCES:
patent: 3544977 (1970-12-01), Bohner
patent: 3916392 (1975-10-01), Richardson
patent: 4573143 (1986-02-01), Matsukawa
patent: 5128894 (1992-07-01), Lin

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