Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-01-11
2011-01-11
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S723000, C257S786000, C257SE25006, C257SE25007, C438S110000, C438S129000
Reexamination Certificate
active
07868438
ABSTRACT:
Multi-chip package includes first through Nth semiconductor chips, each of which includes an input/output pad, an input/output driver coupled to the input/output pad, and an internal circuit. Each of the first through Nth semiconductor chips includes an internal pad for coupling the internal input/output driver and the internal circuit. The internal pads of the first through Nth semiconductor chips are coupled to each other such as via a common pad installed at a substrate. The input/output pad of the first semiconductor chip directly receives an input/output signal transmitted via a corresponding pin of the multi-chip package. The second through Nth semiconductor chips indirectly receive the input/output signal via the internal pads coupled to each other. The multi-chip package can improve signal compatibility by maintaining a parasitic load of a pin to at least the level of a single chip, when a signal is transmitted to the pin at high speed. Also, when a signal that is not necessarily transmitted at high speed is applied to a pin, semiconductor chips can be packaged according to the preexisting methods.
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patent: 2002/0074637 (2002-06-01), McFarland
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Jang Hyun-Soon
Lee Dong-Ho
So Byung-se
Nguyen Dilinh P
Samsung Electronics Co,. Ltd.
Sefer A.
Volentine & Whitt PLLC
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