Multi-chip module semiconductor devices

Details Multi-chip module semiconductor devices Multi-chip module semiconductor devices

2005-07-19

2005-07-19

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257S779000

Reexamination Certificate

active

06919643

ABSTRACT:
In a multi-chip module semiconductor device (1), at least one first semiconductor die (20) is mounted on the base portion (11) of a lead-frame (10). A flip chip IC die (30) is mounted by first bump electrodes (31) to electrode contacts (G, S′) on the at least one first die (20) and by second bump electrodes (32) to terminal pins (14) of the lead frame. The integrated circuit of the flip chip (30) does not require any lead-frame base-portion area for mounting, and low impedance circuit connections are provided by the bump electrodes (31, 32). The first die (20) may be a MOSFET power switching transistor, with a gate driver circuit in the flip chip (30). The circuit impedance for the switching transistor may be further reduced by having distributed parallel gate connections (G), which may alternate with distributed parallel source connections (S′), and furthermore by having distributed and alternating power supply connections (VCC, GND). The module may comprise two series connected transistors (201, 202) and a control circuit flip chip (300), with bump electrodes (31, 32) and strap connections (181, 182) for providing a dc—dc converter without any wire bonds.

REFERENCES:
patent: 5532512 (1996-07-01), Fillion et al.
patent: 5604383 (1997-02-01), Matsuzaki
patent: 5608262 (1997-03-01), Degani et al.
patent: 6600220 (2003-07-01), Barber et al.
patent: 1043771 (2000-10-01), None
patent: 284523 (2001-10-01), None
patent: WO0022666 (2000-04-01), None

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