Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2006-04-18
2006-04-18
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S666000, C257S676000, C257S692000, C257S693000, C257S737000, C257S777000, C438S109000
Reexamination Certificate
active
07030489
ABSTRACT:
Provided herein are multi-chip modules (MCMs) having bonding wires and fabrication methods thereof. The multi-chip module includes a substrate and a plurality of chips sequentially stacked. At least one top chip, stacked above a lowest chip, has an insulating film that covers the backside thereof. Also, each of the stacked chips has bonding pads formed on the periphery or edges of its upper surface. At least one insulator is interposed between the stacked chips. The insulator exposes the pads on the underlying chip. The pads of the respective chips are connected to a set of interconnections, which are disposed on the substrate. This configuration of stacked chips enables the overall height of the memory module to be reduced because the insulating film prevents the bonding wires from contacting the substrate of the top chips.
REFERENCES:
patent: 6333562 (2001-12-01), Lin
patent: 6388313 (2002-05-01), Lee et al.
patent: 6552426 (2003-04-01), Ishio et al.
patent: 6706557 (2004-03-01), Koopmans
patent: 2003/0038374 (2003-02-01), Shim et al.
patent: 2001-308262 (2001-11-01), None
English Language of Abstract Japanese Patent Publication No. 2001-308262 published on Nov. 2, 2001.
An Sang-Ho
Choi Hee-Kook
Kang In-Ku
Lee Sang-Yeop
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Tran Mai-Huong
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