Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2006-08-01
2006-08-01
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S780000, C257S781000, C257S784000, C438S108000, C438S109000, C438S110000
Reexamination Certificate
active
07084514
ABSTRACT:
A substrate includes first and second regions over which first and second semiconductor devices are to be respectively positioned. The first region is located at least partially within the second region. Contact areas are located external to the first region but within the second region. In one embodiment, in which semiconductor devices are to be stacked over and secured to the substrate in a flip-chip type arrangement, the contact areas correspond to bond pads of an upper, second semiconductor device, while other contact areas located within the first region correspond to bond pads of a lower, first semiconductor device. In another embodiment, the contact areas correspond to bond pads of the first semiconductor device, which are electrically connected thereto by way of laterally extending discrete conductive elements, while other contact areas that are located external to the second region correspond to bond pads of the upper, second semiconductor device.
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Brooks Jerry M.
Corisis David J.
Schwab Matt E.
Clark Jasmine
Micro)n Technology, Inc.
TraskBritt
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