Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-26
2009-06-23
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S163000
Reexamination Certificate
active
07550331
ABSTRACT:
A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and source and drain electrodes spaced apart from each other with respect to the gate electrode and extending along the first direction, wherein each of the plurality of active layers includes a channel region overlapped with the gate electrode, a source region, a drain region, and lightly doped drain (LDD) regions, one between the channel region and the source region and another one between the channel region and the drain region, wherein the LDD regions of the adjacent active layers have different lengths from each other.
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Satoshi Inoue,Analysis of Threshold Voltage Shift Caused by Bias Stress in Low Temperature Poly-si TFTs, IEDM 97, Jul. 1997, pp. 527-530.
Lee Seok-Woo
Yu Jae-Sung
Chen Jack
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
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