Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-16
2005-08-16
Lund, Jeffrie R. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S689000, C118S719000, C414S217000, C414S222010, C414S222070, C414S222120, C414S935000, C414S937000, C414S939000, C414S941000, C414S800000, C414S804000, C414S805000, C414S806000, C414S807000, C414S808000, C414S810000, C414S814000, C156S345310, C156S345320
Reexamination Certificate
active
06930050
ABSTRACT:
A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a cleanroom by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number2to5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.
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Jeoung Gyu-chan
Kim Ki-sang
Kwag Gyu-hwan
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