Multi-block memory device erasing methods and related memory...

Details Multi-block memory device erasing methods and related memory... Multi-block memory device erasing methods and related memory...

2006-12-21

2010-10-12

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185110, C365S185230, C365S218000, C365S236000

Reexamination Certificate

active

07813184

ABSTRACT:
Methods of performing multi-block erasing operations on a memory device that includes a plurality of memory blocks are provided. Pursuant to these methods, the rate at which a first voltage that is applied to the memory blocks that are to be erased during the multi-block erasing operation rises is controlled based on the number of memory blocks that are to be erased. The memory device may be a flash memory device, and the first voltage may be an erasing voltage that is applied to a substrate of the flash memory device. The rate at which the first voltage rises may be set so that the substrate of the flash memory device reaches the erasing voltage level at approximately the same time regardless of the number of memory blocks that are to be erased.

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