Multi-bit spin memory

Details Multi-bit spin memory Multi-bit spin memory

2007-10-30

2009-08-04

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S170000

Reexamination Certificate

active

07570510

ABSTRACT:
A multi-state spin based memory cell uses a pair of ferromagnetic layers. A first ferromagnetic layer can be set to any known state k from a set of n different states by adjusting a magnetic orientation of such layer. The relationship of the first ferromagnetic layer and a second magnetic layer can thus correspond to a value of a data item in a non-volatile multi-bit memory cell.

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