Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000, C257S408000, C257S344000, C257S345000, C438S276000, C438S278000, C365S104000, C365S182000
Reexamination Certificate
active
06870233
ABSTRACT:
A multi-bit Read Only Memory (ROM) cell has a semiconductor substrate of a first conductivity type with a first concentration. A first and second regions of a second conductivity type spaced apart from one another are in the substrate. A channel is between the first and second regions. The channel has three portions, a first portion, a second portion and a third portion. A gate is spaced apart and is insulated from at least the second portion of the channel. The ROM cell has one of a plurality of N possible states, where N is greater than 2. The possible states of the ROM cell are determined by the existence or absence of extensions or halos that are formed in the first portion of the channel and adjacent to the first region and/or in the third portion of the channel adjacent to the second region. These extensions and halos are formed at the same time that extensions or halos are formed in MOS transistors in other parts of the integrated circuit device, thereby reducing cost.
REFERENCES:
patent: 3914855 (1975-10-01), Cheney et al.
patent: 4282646 (1981-08-01), Fortino et al.
patent: 4322823 (1982-03-01), Pricer et al.
patent: 5796149 (1998-08-01), Sugaya et al.
Chen Andrew
Chen Bomy
Yue Kai Man
Gray Cary Ware & Freidenrich LLP
Prenty Mark V.
Silicon Storage Technology, Inc.
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