Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-12-04
2009-06-16
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185110, C365S185140, C365S185180
Reexamination Certificate
active
07548457
ABSTRACT:
In a method of programming a nonvolatile memory device including a plurality of n-valued nonvolatile memory cells arranged in a matrix, wherein n is a natural number greater than or equal to two (2), the method includes; programming i-valued data to three or more memory cells contiguously arranged along a first direction of the matrix before programming (i+1)-valued data to any of the three or more memory cells, wherein i is less than n, and wherein the three or more memory cells are programmed during three or more respectively distinct program periods, and after programming the i-valued data to the three or more memory cells, programming (i+1)-valued data to a particular memory cell among the three or more memory cells.
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Kang Sang-Gu
Lim Young-Ho
Le Toan
Nguyen Tuan T
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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