Multi-bit non-volatile memory device, method of operating...

Details Multi-bit non-volatile memory device, method of operating... Multi-bit non-volatile memory device, method of operating...

2007-08-14

2007-08-14

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE29129, C257SE29300

Reexamination Certificate

active

11181724

ABSTRACT:
Disclosed are a muli-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the muli-bit non-volatile memory device may be formed on a semiconductor substrate may include: a plurality of channels disposed perpendicularly to the upper surface of the semiconductor substrate; a plurality of storage nodes disposed on opposite sides of the channels perpendicularly the upper surface of the semiconductor substrate; a control gate surrounding upper portions of the channels and the storage nodes, and side surfaces of the storage nodes; and an insulating film formed between the channels and the storage nodes, between the channels and the control gate, and between the storage nodes and the control gate.

REFERENCES:
patent: 6667201 (2003-12-01), Jang
patent: 1999-023985 (1999-03-01), None
Korean Office Action dated May 4, 2006.

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