Multi-bit non-volatile memory device having a dual-gate and...

Details Multi-bit non-volatile memory device having a dual-gate and... Multi-bit non-volatile memory device having a dual-gate and...

2008-07-22

2008-07-22

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE29279, C365S184000, C327S579000

Reexamination Certificate

active

07402862

ABSTRACT:
The present invention relates to a multi-bit non-volatile memory device having a dual gate employing local charge trap and method of manufacturing the same, and an operating method for a multi-bit cell operation.

REFERENCES:
patent: 6011725 (2000-01-01), Eitan
patent: 6903967 (2005-06-01), Mathew et al.
patent: 2003/0062567 (2003-04-01), Zheng et al.

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