Multi-bit memory unit and fabrication method thereof

Details Multi-bit memory unit and fabrication method thereof Multi-bit memory unit and fabrication method thereof

2006-02-21

2006-02-21

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S334000

Reexamination Certificate

active

07002206

ABSTRACT:
A multi-bit memory unit and fabrication method thereof. A semiconductor substrate forming a protruding semiconductor substrate is provided, an ion implantation region is formed on the semiconductor substrate beside the protruding semiconductor substrate, a spacer is formed on a sidewall of the protruding semiconductor substrate, a doped region is formed on the semiconductor substrate, and an ONO layer is conformally formed on the surface of the protruding semiconductor substrate, the spacer, the doped region, and the semiconductor substrate.

REFERENCES:
patent: 5616510 (1997-04-01), Wong
patent: 5693552 (1997-12-01), Hsu
patent: 5945705 (1999-08-01), Liu et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6043122 (2000-03-01), Liu et al.

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