Static information storage and retrieval – Read only systems
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read only systems
C365S072000, C365S105000, C365S175000
Reexamination Certificate
active
07929330
ABSTRACT:
A memory device may include a cathode, an anode, a link connected to the anode, and a first connection element that connects the link to the cathode. The link and the anode may be located in a position lower than that of the cathode or the link and the anode may be located in a position higher than that of the cathode. Also, the cathode, the anode, the link, and the first connection element may be formed on the same plane.
REFERENCES:
patent: 4494135 (1985-01-01), Moussie
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6737691 (2004-05-01), Asao
patent: 7379317 (2008-05-01), Bill et al.
patent: 7586773 (2009-09-01), Herner
patent: 2004-247360 (2004-09-01), None
patent: 2005-051152 (2005-02-01), None
patent: 2003-0002044 (2003-01-01), None
Hwang Soo-jung
Joo Young-Chang
Jung Sung-yup
Kim Deok-Kee
Sung Jung-hun
Harness & Dickey & Pierce P.L.C.
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
Seoul National University Industry Foundation
LandOfFree
Multi-bit memory device using multi-plug does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-bit memory device using multi-plug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-bit memory device using multi-plug will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2646156