Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-11-27
2007-11-27
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
10881746
ABSTRACT:
A magnetic random access memory element is made from a first magnetic tunnel junction and a second magnetic tunnel junction. These magnetic tunnel junctions are connected to each other in a series resistive circuit. The connected first and second magnetic tunnel junctions are connected to a bit line through an access transistor. A write bit line and a write data line are associated with each of the first and second magnetic tunnel junctions. By application of appropriate currents to these lines, the magnetic vector orientation with each of the first and second magnetic tunnel junctions can be controlled so as to store information within the element in any one of at least three logic states.
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Hoang Huan
Jorgenson Lisa K.
STMicroelectronics Inc.
Szuwalski Andre M.
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