Multi-bit magnetic memory cells

Details Multi-bit magnetic memory cells Multi-bit magnetic memory cells

2005-03-01

2005-03-01

Wille, Douglas (Department: 2814)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C360S324000, C257S030000

Reexamination Certificate

active

06862212

ABSTRACT:
A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.

REFERENCES:
patent: 5930164 (1999-07-01), Zhu

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