Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-01-25
2011-01-25
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185080, C365S185120, C365S185220, C365S185280
Reexamination Certificate
active
07876613
ABSTRACT:
Multi-bit flash memory devices are provided. The multi-bit flash memory device includes an array of memory cells and a page buffer block including page buffers. Each of the page buffers has a single latch structure and performs a write operation with respect to memory cells according to loaded data. A buffer random access memory (RAM) is configured to store program data provided from an external host device during a multi-bit program operation. Control logic is provided that is configured to control the page buffer block and the buffer RAM so that program data stored in the buffer RAM is reloaded into the page buffer block whenever data programmed before the multi-bit program operation is compared with data to be currently programmed. The control logic is configured to store data to be programmed next in the buffer RAM before the multi-bit program operation is completed.
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Kang Sang-Chul
Lee Ho-kil
Lee Jin-Yub
Myers Bigel & Sibley & Sajovec
Pham Ly D
Samsung Electronics Co,. Ltd.
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