Multi-bit flash memory devices and methods of programming...

Details Multi-bit flash memory devices and methods of programming... Multi-bit flash memory devices and methods of programming...

2009-05-26

2011-12-06

Nguyen, Dang (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185330, C365S185180

Reexamination Certificate

active

08072804

ABSTRACT:
A non-volatile memory device includes an array of non-volatile memory cells configured to support single bit and multi-bit programming states. A control circuit is provided, which is configured to program a first page of non-volatile memory cells in the array as M-bit cells during a first programming operation and further configured to program the first page of non-volatile memory cells as N-bit cells during a second programming operation. The first and second programming operations are separated in time by at least one operation to erase the first page of non-volatile memory cells. M and N are unequal integers greater than zero.

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patent: 1020040044938 (2004-05-01), None

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