Multi-angle rotation for ion implantation of trenches in...

Details Multi-angle rotation for ion implantation of trenches in... Multi-angle rotation for ion implantation of trenches in...

2009-02-13

2010-12-07

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21059

Reexamination Certificate

active

07846821

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first conductivity at a first implantation direction. The first sidewall of the at least one first trench is implanted with the dopant of the first conductivity at a second implantation direction. The second implantation direction is orthogonal to the first implantation direction. The first and second implantation directions are non-orthogonal to the first sidewall.

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