MugFET with stub source and drain regions

Details MugFET with stub source and drain regions MugFET with stub source and drain regions

2011-03-08

2011-03-08

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C438S300000, C438S302000, C438S479000, C257S401000

Reexamination Certificate

active

07902000

ABSTRACT:
The present invention provides a semiconductor device that includes at least one semiconductor Fin structure atop the surface of a substrate; the semiconducting fin structure including a channel of a first conductivity type and source/drain regions of a second conductivity type, the source/drain regions present at each end of the semiconductor fin structure; a gate structure immediately adjacent to the semiconductor fin structure, a dielectric spacer abutting each sidewall of the gate structure wherein the each end of the fin structure extends a dimension that is less than about ¼ a length of the Si-containing fin structure from a sidewall of the dielectric spacer; and a semiconductor region to the each end of the semiconductor fin structure, wherein the semiconductor region to the each end of the semiconductor fin structure is separated from the gate structure by the dielectric spacer.

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