Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-05-06
2008-05-06
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21665
Reexamination Certificate
active
07368299
ABSTRACT:
Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices, wherein the second magnetic layer or free layer of a magnetic stack may be patterned using a wet etch technique. A cap layer is formed over the free layer after the free layer is patterned. The cap layer is formed using lift-off techniques. To form the cap layer, resist layers are deposited and patterned, and material layers are deposited over the resist layers. Portions of the material layers are removed when the resist is stripped.
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Lee Gill Yong
O'Sullivan Eugene
Infineon - Technologies AG
International Business Machines - Corporation
Slater & Matsil L.L.P.
Smith Zandra V.
Thomas Toniae M
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