MRAM with vertical storage element and field sensor

Details MRAM with vertical storage element and field sensor MRAM with vertical storage element and field sensor

2007-04-03

2007-04-03

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

10923651

ABSTRACT:
A magnetic memory element comprising a magnetic storage element having at least one magnetic layer made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic layer having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element for sensing the magnetization of the at least one magnetic layer of the magnetic storage element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the at least one magnetic layer of the magnetic storage element, the magnetic sensor element being conductively coupled to the at least one current line.

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patent: 1 387 400 (2006-03-01), None
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German Office Action dated Aug. 14, 2006. (4 pgs.).

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