MRAM with magnetic via for storage of information and field...

Details MRAM with magnetic via for storage of information and field... MRAM with magnetic via for storage of information and field...

2006-08-15

2006-08-15

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07092284

ABSTRACT:
A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, wherein the magnetic sensor element being conductively connected to said at least one current line.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6664579 (2003-12-01), Kim et al.
patent: 6870760 (2005-03-01), Tsang
patent: 6909129 (2005-06-01), Kim et al.
patent: 6909630 (2005-06-01), Tsang
patent: 6909633 (2005-06-01), Tsang

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