MRAM with high GMR ratio

Details MRAM with high GMR ratio MRAM with high GMR ratio

1997-05-23

1998-10-27

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 700

Patent

active

058285989

ABSTRACT:
A magnetic memory cell with increased GMR ratio includes first and second layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material sandwiched between the first and second layers of magnetic material. Each of the first and second layers is switchable between a first and a second magnetic state and is formed to switch states with the application of a substantially equal magnetic field. A third layer of magnetic material is positioned adjacent one of the first and second layers of magnetic material so as to alter the amount of magnetic field required to switch the states of the one of the first and second layers of magnetic material. The third layer of magnetic material can be formed with a width larger than the cell width to increase the magnetic width of the cell and reduce the magnetic field required to switch states.

REFERENCES:
patent: 5477482 (1995-12-01), Prinz
patent: 5650958 (1997-07-01), Gallagher et al.

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