MRAM with coil for creating offset field

Details MRAM with coil for creating offset field MRAM with coil for creating offset field

2007-04-03

2007-04-03

Pham, Ly D. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S066000, C365S171000, C365S172000, C365S173000, C365S208000

Reexamination Certificate

active

10998808

ABSTRACT:
An MRAM memory chip includes a plurality of magnetoresistive memory cells each including a magnetic tunnel junction having first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers that are antiferromagnetically coupled, wherein a coil surrounds the memory chip for creating a magnetic offset field. Further, a method of writing to an MRAM chip includes bringing the memory cells into an active state exhibiting a reduced switching field before writing thereto and bringing the memory cells into a passive state exhibiting enlarged switching field after writing thereto.

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patent: WO 03/092011 (2003-11-01), None

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