MRAM signal size increasing apparatus and methods

Details MRAM signal size increasing apparatus and methods MRAM signal size increasing apparatus and methods

2005-06-21

2005-06-21

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S189070, C365S189090

Reexamination Certificate

active

06909629

ABSTRACT:
MRAM sensing operations use a word line (80, 82, 84, 86) and a sense current to detect the state of a bit (70, 72). The bit (70, 72) has a high resistance or a low resistance state. Using multiple sub bits (30, 32, 34, 36, 38, 40, 42, 44) in each bit (70, 72) increases the difference between the high resistance and low resistance state in proportion to the number of sub bits (30, 32, 34, 36, 38, 40, 42, 44) in each bit (70, 72). Multiple sub bits (30, 32, 34, 36, 38, 40, 42, 44) also provide redundancy in the event of failure of a sub bit (30, 32, 34, 36, 38, 40, 42, 44). The MRAM can be designed to function with one or more sub bits (30, 32, 34, 36, 38, 40, 42, 44) being defective.

REFERENCES:
patent: 6380636 (2002-04-01), Tatsukawa et al.
patent: 6594176 (2003-07-01), Lammers

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