MRAM Memory conditioning

Details MRAM Memory conditioning MRAM Memory conditioning

2007-02-23

2008-11-04

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S201000

Reexamination Certificate

active

07447060

ABSTRACT:
According to an example embodiment, a method (500) includes applying a magnetic field to an array of Magnetic Tunnel Junction (MTJ) bits, a magnitude of the magnetic field sufficient to eliminate a stuck-at-mid condition exhibited by one of the MTJ bits without causing other ones of the MTJ bits to develop the stuck-at-mid condition.

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patent: 6925000 (2005-08-01), Sussner
patent: 7072208 (2006-07-01), Min et al.
patent: 7345911 (2008-03-01), Min et al.
patent: 7355884 (2008-04-01), Nakayama et al.
patent: 07094717 (1995-04-01), None
patent: 2003-060202 (2003-02-01), None
PCT Search Report, PCT/US2008/051844, dated Jan. 24, 2008.

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