Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-06-27
2008-10-14
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C438S003000
Reexamination Certificate
active
07436700
ABSTRACT:
An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
REFERENCES:
patent: 5953248 (1999-09-01), Chen et al.
patent: 5966323 (1999-10-01), Chen et al.
patent: 5982660 (1999-11-01), Bhattacharyya et al.
patent: 6483741 (2002-11-01), Iwasaki et al.
patent: 6531723 (2003-03-01), Engel et al.
patent: 6654278 (2003-11-01), Engel et al.
patent: 6936903 (2005-08-01), Anthony et al.
patent: 2003/0063492 (2003-04-01), Ruhrig et al.
R. P. Cowburn, “Property variation with shape in magnetic nanoelements,” J. Phys. D: Appl. Phys. 33 (2000), pp. R1-R16.
Daniel Braun, “Effect of crystalline disorder on magnetic switching in small magnetic cells,” Journal of Magnetism and Magnetic Materials 261 (2003), pp. 295-303.
L. D. Buda, et al., “Micromagnetic simulations of magnetization in circular cobalt dots,” Computational Materials Science 24 (2002), pp. 181-185.
M. Demand, et al., “Magnetic domain structures in arrays of submicron Co dots studied with magnetic force microscopy,” Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 5111-5113.
J. Fidler, et al., “Micromagnetic simulation of the magnetic switching behaviour of mesoscopic and nanoscopic structures,” Computational Materials Science 24 (2002), pp. 163-174.
K. Y. Guslienko, et al., “Magnetization reversal due to vortex nucleation, displacement, and annihilation in submicron ferromagnetic dot arrays,” Physical Review B., vol. 65, pp. 024414-1-024414-10.
Jihg Shi et al., “Geometry dependence of magnetization vortices in patterned submicron NiFe elements,” Applied Physics Letters, vol. 76, No. 18, May 1, 2000, pp. 2588-2590.
Jonathan Kin Ha, et al., “Micromagnetic study of magnetic configurations in submicron permalloy disks,” Physical Review B., 67, (2003), pp. 224432-1-224432-9.
Horst Hoffmann, “Influence of local inhomogeneities on the magnetic properties of thin ferromagnetic films and nanostructures,” Thin Solid Films 3763 (2000), pp. 107-112.
Klostermann Ulrich
Ruehrig Manfred
Wecker Joachim
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Nguyen Van-Thu
Sofocleous Alexander
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