MRAM including unit cell formed of one transistor and two...

Details MRAM including unit cell formed of one transistor and two... MRAM including unit cell formed of one transistor and two...

2007-03-27

2007-03-27

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21665, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

11152346

ABSTRACT:
In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.

REFERENCES:
patent: 6864551 (2005-03-01), Tsang
patent: 6885577 (2005-04-01), Tang et al.
patent: 6891193 (2005-05-01), Schwarz
patent: 2003/0117835 (2003-06-01), Kim et al.
patent: 2004/0211995 (2004-10-01), Park et al.
patent: 2004/0253786 (2004-12-01), Hwang et al.

Affiliated with

Also associated with

Rating

MRAM including unit cell formed of one transistor and two... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MRAM including unit cell formed of one transistor and two..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MRAM including unit cell formed of one transistor and two... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3771955