MRAM having two write conductors

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S063000, C365S066000

Reexamination Certificate

active

07102918

ABSTRACT:
A magnetic random-access memory (MRAM) cell according to an embodiment of the invention is disclosed that comprises a magnetic storage element having an easy axis and a hard axis, a write conductor positioned along one of the easy axis and the hard axis, and a write conductor positioned at a non-parallel and non-perpendicular angle to both of the easy axis and the hard axis.

REFERENCES:
patent: 6577529 (2003-06-01), Sharma et al.
patent: 2003/0007395 (2003-01-01), Stephenson et al.
patent: 2004/0001368 (2004-01-01), Huggins

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