Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-09-05
2006-09-05
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S063000, C365S066000
Reexamination Certificate
active
07102918
ABSTRACT:
A magnetic random-access memory (MRAM) cell according to an embodiment of the invention is disclosed that comprises a magnetic storage element having an easy axis and a hard axis, a write conductor positioned along one of the easy axis and the hard axis, and a write conductor positioned at a non-parallel and non-perpendicular angle to both of the easy axis and the hard axis.
REFERENCES:
patent: 6577529 (2003-06-01), Sharma et al.
patent: 2003/0007395 (2003-01-01), Stephenson et al.
patent: 2004/0001368 (2004-01-01), Huggins
Eldredge Kenneth J.
Smith Kenneth K.
Hewlett--Packard Development Company, L.P.
Ho Hoai V.
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