MRAM having SAL layer

Details MRAM having SAL layer MRAM having SAL layer

2005-09-20

2005-09-20

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

06947312

ABSTRACT:
A second conductive layer is formed above a first conductive layer and arranged substantially perpendicular to the first conductive layer. A plurality of magneto-resistance effect elements are formed between the first and second conductive layers and arranged in the lengthwise direction of the first conductive layer and contain free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers. A magnetic layer is inserted between the first conductive layer and the magneto-resistance effect elements and causes magnetic interaction with respect to the free layers of the magneto-resistance effect elements.

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patent: 6707083 (2004-03-01), Hiner et al.
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patent: 6828785 (2004-12-01), Hosomi et al.
patent: 6829161 (2004-12-01), Huai et al.
patent: 2004/0100832 (2004-05-01), Nakajima
patent: 8-306014 (1996-11-01), None
patent: WO 00/10172 (2000-02-01), None

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